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In work results of researches in the area of simulation of electrical characteristics of the AlGaN/GaN field-effect transistor are provided. The considerable differ-ence of transport processes in case of the strong and feeble electrical polarization is shown. The role of capture of centers in volume of a buffer layer GaN is ana-lyzed and it is shown that deep interruptions can influence considerably on distri-bution of electrostatic potential and density of electrons in a buffer layer. In case of high concentration of interruptions there is a sharp lowering of density of the free electrons with increase of distance from the channel, the current density in the depth of a buffer layer decreases. The received scientific results have allowed to use the scientific software for disciplines on the automated design in electron-ics, automation of an experiment and for design and modeling micro and nanosystems within the direction of microelectronics and nanoelectronics for training of masters at the university. Software systems are designed for mathe-matical simulation of semiconductor manufacturing processes, their electrical, op-tical, thermal, and other characteristics. A significant advantage is the possibility of establishing a relationship between the devices characteristics and the manufac-turing technology and design parameters, without involving costly experimental studies, based on their physical implementation. The software is used to develop devices and elements of integrated circuits, to study de-vice properties in various operating modes when exposed to various external factors.